Rectifying behavior of individual SnO2 nanowire by different metal electrode contacts

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1379-1381

  Chen, Meimei ^a   Xia, Xiaoxiang ^a   Wang, Zongli ^a   Li, Yunlong ^a   Li, Junjie ^a   Gu, Changzhi ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Electron beam lithography system (EBL); Focused ion beam etching and depositing system (FIB); Schottky diode; SnO2 nanowire

Indexed keywords

ELECTRIC CONTACTS; ELECTRON BEAM LITHOGRAPHY; ETCHING; FOCUSED ION BEAMS; SCHOTTKY BARRIER DIODES; TANTALUM COMPOUNDS;

FOCUSED ION BEAM ETCHING AND DEPOSITING SYSTEM (FIB); METAL ELECTRODE CONTACTS;

NANOWIRES;

EID: 44149084032     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.027     Document Type: Article

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