Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6468, Issue , 2007, Pages

  Iida, K ^a   Watanabe, H ^a   Takeda, K ^a   Nagai, T ^a   Sumii, T ^a   Nagamatsu, K ^a   Balakrishnan, K ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a   Bandoh, A ^b  

^a MEIJO UNIVERSITY   (Japan)

^b Showa Denko Materials Co   (Japan)

Author keywords

AIN; AlGaN; ELO; UV LED

Indexed keywords

ALUMINUM GALLIUM NITRIDE; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ULTRAVIOLET RADIATION;

DEVICE STRUCTURES; GAN UNDERLAYERS; HIGH TEMPERATURE MOVPE; NON-RADIATIVE RECOMBINATION PROCESSES;

LIGHT EMITTING DIODES;

EID: 34248575938     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.717174     Document Type: Conference Paper

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