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Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

Ab initio study of Al-Ni bilayers on SiO2 : Implications to effective work function modulation in gate stacks

(5) Magyari Köpe, Blanka a Park, Seongjun a Colombo, Luigi b Nishi, Yoshio a Cho, Kyeongjae c

a Stanford University (United States)

b TEXAS INSTRUMENTS (United States)

c UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; ATOMIC ARRANGEMENT; ATOMIC LAYER; BI-LAYER; EFFECTIVE WORK FUNCTION; EXCESS OXYGEN; GATE STACKS; HIGH-WORK-FUNCTION METAL; METAL BILAYERS; METAL OXIDE INTERFACE; METAL THICKNESS; MODEL SYSTEM; VALENCE BAND OFFSETS;

ALUMINA; ALUMINUM; ATOMS; DENSITY FUNCTIONAL THEORY; HETEROJUNCTIONS; LOCAL DENSITY APPROXIMATION; OXIDE MINERALS; OXYGEN; QUARTZ; SILICON COMPOUNDS; WORK FUNCTION;

METALS;

EID: 67649875684 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3033368 Document Type: Article

Times cited : (16)

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