Interdependence of contact properties and field- and density-dependent mobility in organic field-effect transistors

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Scheinert, Susanne ^a   Paasch, Gernot ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE POLYMERS; BOTTOM CONTACTS; CONTACT PROPERTIES; CURRENT CHARACTERISTIC; DENSITY-DEPENDENT; DEVICE PERFORMANCE; FIELD DEPENDENCE; HIGH RESISTANCE; IDEALITY FACTORS; LOW DRAIN VOLTAGES; MIXED MODE SIMULATION; NON-LINEARITY; ORGANIC FIELD-EFFECT TRANSISTORS; POLYMER INTERFACES; SCHOTTKY; SCHOTTKY CONTACTS; SIMULATED PROFILE; SOLUTION-BASED DEPOSITION; TOP CONTACT; TRAP RECHARGING; TWO-DIMENSIONAL SIMULATIONS;

CARRIER CONCENTRATION; DRAIN CURRENT; LEAD; SIMULATORS;

FIELD EFFECT TRANSISTORS;

EID: 67649766775     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3058640     Document Type: Article

References (34)

1. L. Zhou, A. Wanga, S. -C. Wu, J. Sun, S. Park, and T. N. Jackson, Appl. Phys. Lett. 0003-6951 10.1063/1.2178213 88, 083502 (2006).
2. E. Cantatore, T. C. T. Geuns, A. F. A. Gruijthuijsen, G. H. Gelinck, S. Drews, and D. M. de Leeuw, Dig. Tech. Pap.- IEEE Int. Solid-State Circuits Conf. 1042, 6 (2006).
3. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9 14, 99 (2002).
4. St. R. Forrest, Nature (London) 0028-0836 10.1038/nature02498 428, 911 (2004).
5. C. Reese, M. Roberts, M. Ling, and Z. Bao, Mater. Today 1369-7021 10.1016/S1369-7021(04)00398-0 7, 20 (2004).
6. H. Sirringhaus, Adv. Mater., (Weinheim, Ger.) 17, 2411 (2005). 0935-9648
7. S. Scheinert, G. Paasch, Phys. Status Solidi A 0031-8965 10.1002/pssa.200404335 201, 1263 (2004).
8. D. J. Gundlach, L. Zhou, J. A. Nichols, T. N. Jackson, P. V. Necliudov, and M. S. Shur, J. Appl. Phys. 0021-8979 10.1063/1.2215132 100, 024509 (2006).
9. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl. Phys. 0021-8979 10.1063/1.1323534 88, 6594 (2000).
10. J. A. Nichols, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 0003-6951 10.1063/1.1611278 83, 2366 (2003).
11. L. Bürgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. 0003-6951 10.1063/1.1470702 80, 2913 (2002).
12. L. Bürgi, T. J. Richardson, R. H. Friend, and H. Sirringhaus, J. Appl. Phys. 0021-8979 10.1063/1.1613369 94, 6129 (2003).
13. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 0038-1101 10.1016/S0038-1101(02)00204-6 47, 259 (2003).
14. N. Yoneya, M. Noda, N. Hirai, K. Nomoto, M. Wada, and J. Kasahara, Appl. Phys. Lett. 0003-6951 10.1063/1.1814443 85, 4663 (2004).
15. W. -K. Kim and J. -L. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2218044 88, 262102 (2006).
16. I. N. Hulea, S. Russo, A. Molinari, and A. F. Morpurgo, Appl. Phys. Lett. 0003-6951 10.1063/1.2185632 88, 113512 (2006).
17. S. Scheinert, G. Paasch, I. Hörselmann, and A. Herasimovich, Phys. Status Solidi A 0031-8965 10.1002/pssa.200510027 202, R82 (2005).
18. A. Herasimovich, S. Scheinert, and I. Hörselmann, J. Appl. Phys. 0021-8979 10.1063/1.2776252 102, 054509 (2007).
19. A. Bolognesi, A. Di Carlo, and P. Lugli, Appl. Phys. Lett. 0003-6951 10.1063/1.1527983 81, 4646 (2002).
20. D. Gupta, N. Jeon, and S. Yoo, Org. Electron. 9, 1026 (2008). 1566-1199
21. P. Stallinga and H. L. Gomes, Synth. Met. 0379-6779 10.1016/j.synthmet. 2006.09.015 156, 1305 (2006).
22. P. W. M. Blom, M. J. M. de Jong, and M. G. van Munster, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.R656 55, R656 (1997).
23. P. W. M. Blom and M. C. J. M. Vissenberg, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.80.3819 80, 3819 (1998).
24. B. N. Limketkai, P. Jadhav, and M. A. Baldo, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.113203 75, 113203 (2007).
25. R. Coehoorn, W. F. Pasveer, P. A. Bobbert, and M. A. J. Michels, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.155206 72, 155206 (2005).
26. W. F. Pasveer, J. Cottaar, C. Tanase, R. Coehoorn, P. A. Bobbert, P. W. M. Blom, D. M. de Leeuw, and M. A. J. Michels, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.94.206601 94, 206601 (2005).
27. Nature Mater. 1476-1122 10.1038/nmat1432 4, 509 (2005).
28. ISE-TCAD, Integrated Systems Engineering AG, Zurich, Switzerland, 1995.
29. G. Paasch and S. Scheinert, J. Appl. Phys. 0021-8979 10.1063/1.2424397 101, 024514 (2007).
30. L. Li, G. Meller, and H. Kosina, Microelectron. J. 0026-2692 10.1016/j.mejo.2006.09.022 38, 47 (2007).
31. L. Li, G. Meller, and H. Kosina, Synth. Met. 0379-6779 10.1016/j.synthmet.2007.03.002 157, 243 (2007).
32. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.12964 57, 12964 (1998).
33. C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. de Leeuw, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.91.216601 91, 216601 (2003).
34. D. H. Dunlap, P. E. Parris, and V. M. Kenkre, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.542 77, 542 (1996).