Influence of source/drain contacts on sub-micrometer organic field-effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 8, 2005, Pages

  Scheinert, S ^a   Paasch, G ^b   Horselmann I ^a   Herasimovich, A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; LOW DRAIN VOLTAGES; ORGANIC TRANSISTORS; SHOCKLEY EQUATION;

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL;

FIELD EFFECT TRANSISTORS;

EID: 25444503517     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200510027     Document Type: Article

References (6)

1. Y. Zhang, J. R. Petta, S. Ambily, Y. Shen, D. C. Ralph, and G. Malliaras, Adv. Mater. 19, 1632 (2003).
2. S. Scheinen, A. Scherer, T. Doll, G. Paasch, and I. Hörselmann, Appl. Phys. Lett. 84, 4427 (2004).
3. L. Bürgi, T. J. Richards, R. H. Friend, and H. Sirringhaus, J. Appl. Phys. 94, 6129 (2003).
4. N. Yoneya, M. Noda, N. Hirai, K. Nomoto, M. Wada, and J. Kasahara, Appl. Phys. Lett. 85, 4663 (2004).
5. S. Scheinert and G. Paasch, phys. stat. sol. (a) 201, 1263 (2004).
6. R. A. Street, A. Salleo, and M. L. Chabinyc, Phys. Rev. B 68, 085316 (2003).