Reduction of contact resistance in pentacene thin-film transistors by direct carrier injection into a-few-molecular-layer channel

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4663-4665

  Yoneya, Nobuhide ^a   Noda, Makoto ^a   Hirai, Nobukazu ^a   Nomoto, Kazumasa ^a   Wada, Masaru ^a   Kasahara, Jiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; ELECTRODES; EVAPORATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SELF ASSEMBLY;

CARRIER INJECTION; CHANNEL LENGTHS; DEPOSITION RATE; DRAIN ELECTRODES;

THIN FILM TRANSISTORS;

EID: 10944238702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814443     Document Type: Article

References (16)

1. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 80, 1088 (2002).
2. G. H. Gelinck, H. E. A. Huitema, E. van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. van der Putten, T. C. T. Geuns, M. Beenhak-kers, J. B. Giesbers, B-H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, Bas. J. E. van Rens, and D. M. de Leeuw, Nat. Mater. 3, 106 (2004).
3. L. Bürgi, H. Shirringhaus, and R. H. Friend, Appl. Phys. Lett. 80, 2913 (2002).
4. E. J. Meijer, G. H. Gelinck, E. van Neenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 82, 4576 (2003).
5. J. A. Nichols, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett 83, 2366 (2003).
6. K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Appl. Phys. Lett. 83, 5539 (2003).
7. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2003).
8. V. Podzorov, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 82, 1739 (2003).
9. V Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 83, 3504 (2003).
10. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 84, 813 (2004).
11. J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, J. Appl. Phys. 94, 5800 (2003).
12. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Trans. Electron Devices 48, 1060 (2001).
13. E. L. Granstrom and C. D. Frisbie, J. Phys. Chem. B 103, 8842 (1999).
14. L. Zuppiroli, L. Si-Ahmed, K. Kamaras, F. Nüesch, M. N. Bussac, D. Ades, A. Siove, E. Moons, and M. Grätzel, Eur. Phys. J. B 11, 505 (1999).
15. R. Hajlaoui, G. Horowitz, F. Garnier, A. Arce-Brouchet, L. Laigre, A. E. Kassmi, F. Demanze, and F. Kouki, Adv. Mater. (Weinheirn, Ger.) 9, 389 (1999).
16. D. J. Gundlach, L. Jia, and T. N. Jackson, IEEE Electron Device Lett. 12, 571 (2001).