Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers

Sensors and Actuators, B: Chemical

Volumn 120, Issue 2, 2007, Pages 687-693

  Tsai, Yan Ying ^a   Cheng, Chin Chuan ^a   Lai, Po Hsien ^a   Fu, Ssu I ^a   Hong, Ching Wen ^a   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaAs; Hydrogen sensor; InGaP; Transistor

Indexed keywords

CHEMICAL SENSORS; HYDROGEN; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

ALGAAS; HYDROGEN SENSORS; TEMPERATURE REGIMES;

MOSFET DEVICES;

EID: 33845608435     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2006.03.035     Document Type: Article

References (23)

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