InN-based layers grown by modified HVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1444-1447

  Syrkin, A ^a   Usikov, A ^a   Soukhoveev, V ^a   Kovalenkov, O ^a   Ivantsov, V ^a   Dmitriev, V ^a   Collins, C ^b   Readinger, E ^b   Shmidt, N ^c   Davydov, V ^c   Nikishin, S ^d   Kuryatkov, V ^d   Song, D ^d   Rosenbladt, D ^d   Holtz, Mark ^d  

^a Technologies and Devices International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT WALL REACTORS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); INN; NANORODS; 68.55.JK; 73.61.EY; 81.05.EA; 81.07.BC; 81.15.KK; 85.60.JB;

ALUMINUM NITRIDE; ATMOSPHERIC PRESSURE; NANOSTRUCTURED MATERIALS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

SEMICONDUCTING INDIUM COMPOUNDS; SAPPHIRE;

EID: 33746348318     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565454     Document Type: Conference Paper

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