Electrical properties in low temperature range (5 K-300 K) of Tantalum Oxide dielectric MIM capacitors

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 925-928

  Deloffre, E ^a,b   Montes L ^a   Ghibaudo, G ^a   Bruyere S ^b   Blonkowski, S ^c   Becu S ^b   Gros Jean, M ^b   Cremer S ^b  

^a IMEP LAHC   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LOW TEMPERATURE EFFECTS; PERMITTIVITY; TANTALUM COMPOUNDS;

CONDUCTION MECHANISMS; DIPOLE MOMENT; LANGEVIN THEORY; METAL-INSULATOR-METAL (MIM) CAPACITORS;

CAPACITORS;

EID: 14744268421     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.024     Document Type: Conference Paper

References (8)

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