Effects of postmetallization oxygen annealing on electrical properties of 25 nm thick amorphous BaSm2Ti4O12 film

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Jeong, Young Hun ^a   Paik, Jong Hoo ^a   Lee, Young Jin ^a   Nahm, Sahn ^b  

^a Korea Institute of Ceramic Engineering and Technology (KICET)   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BARIUM; CAPACITANCE; CURRENT DENSITY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MECHANISMS; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; METALS; NONMETALS; OXYGEN; SILICON; THICK FILMS;

ANNEALING PROCESSING; CONDUCTION MECHANISMS; ELECTRICAL PROPERTIES; HIGH-CAPACITANCE DENSITY; LEAKAGE CURRENT DENSITIES; METAL-INSULATOR-METAL CAPACITORS; OXYGEN ANNEALING; OXYGEN PRESSURES; POOLE-FRENKEL MECHANISMS; Q VALUES; RADIO FREQUENCIES; SI SUBSTRATE; TEMPERATURE CO-EFFICIENT;

ANNEALING;

EID: 51849128294     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2966215     Document Type: Article

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