Effect of copper emitted from wafers on etch rates of insulator films in capacitively coupled fluorocarbon plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 1, 2009, Pages 1-8

  Imai, Shin Ichi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; EMISSION SPECTROSCOPY; ETCHING; FREE RADICAL POLYMERIZATION; INTERMODULATION; INTERMODULATION MEASUREMENT; METALLIC FILMS; MOLECULAR SPECTROSCOPY; NITRIDES; OPTICAL EMISSION SPECTROSCOPY; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PHOTORESISTS; PLASMA DENSITY; PLASMA DIAGNOSTICS; PLASMA ETCHING; PLASMA JETS; PLASMAS; PLASTIC FILMS; POLYMER FILMS; POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SILICON NITRIDE; SILICON WAFERS; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AR PLASMAS; ATOMIC ABSORPTION SPECTROSCOPIES; CAPACITIVELY COUPLED; CATALYTIC EFFECTS; COLLECTION EFFICIENCIES; COPPER CONCENTRATIONS; COPPER FILMS; ETCH RATES; ETCH TIMES; ETCHED SURFACES; ETCHING REACTIONS; FLUOROCARBON PLASMAS; INSULATOR FILMS; OPTICAL INTENSITIES; PASSIVATION LAYERS; PLASMA IMPEDANCES; PROCESS CHAMBERS; RF POWERS; SILICON DIOXIDES; SIN FILMS; THICK POLYMER FILMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

COPPER;

EID: 58149504200     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3006029     Document Type: Article

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