Cleaning of CHF3 plasma-etched SiO2/SiN/Cu via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vapors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 2986-2995

  Ueno, Kazuyoshi ^a   Donnelly, Vincent M ^b   Tsuchiya, Yasuaki ^a  

^a NEC CORPORATION   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010685921     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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