3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 880-887

  Wang, Wei Ching ^a   Chang, Shu Tong ^a   Huang, Jacky ^a   Kuang, Shin Jiun ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Mobility; MOSFET; Silicon carbon alloy; Stress

Indexed keywords

CHANNEL REGION; DRIVE CURRENT ENHANCEMENT; DRIVE CURRENTS; GATE OXIDE; GROWTH DIRECTIONS; MOBILITY; MOSFET; NARROW WIDTH; NMOSFETS; SILICON-BASED; SILICON-CARBON ALLOY; STRAINED-SI; STRESS DISTRIBUTION; STRESSED SILICON; TCAD SIMULATION; TRANSPORT DIRECTION; VERTICAL DIRECTION;

COMPRESSIVE STRESS; DRAIN CURRENT; ELECTRIC BREAKDOWN; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; STRESS CONCENTRATION; TENSILE STRESS; THREE DIMENSIONAL;

SILICON ALLOYS;

EID: 67649227105     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.023     Document Type: Article

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