Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 96-99

  Watling, J R ^a   Asenov, A ^a   Barker, J R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; IONIC CONDUCTION; MONTE CARLO METHODS; SEMICONDUCTOR ALLOYS; VALENCE BANDS;

EFFECTIVE MASS; GEOMETRIC MODELING; HOLE TRANSPORTS; MODEL-MAKING; MOSFETS; SI/SIGE; SI1-XGEX; TRANSPORT CHARACTERISTICS;

SI-GE ALLOYS;

EID: 84857711033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742719     Document Type: Conference Paper

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