Impact of shear strain and quantum confinement on <110> channel nMOSFET with high-stress cesl

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 105-108

  Takashino, H ^a   Okagaki, T ^a   Uchida, T ^a   Hayashi, T ^a   Tanizawa, M ^a   Tsukuda, E ^a   Eikyu, K ^a   Wakahara, S ^a   Ishikawa, K ^a   Tsuchiya, O ^a   Inoue, Y ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM CONFINEMENT; SHEAR FLOW; SHEAR STRAIN;

65-NM NODE; BENDING EXPERIMENTS; CHANNEL DIRECTIONS; CONTACT ETCH STOP LAYERS; DEVICE PERFORMANCE; HIGH STRESS; QUANTUM CONFINEMENT EFFECTS; STRAIN COMPONENTS;

MOSFET DEVICES;

EID: 84901343349     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_25     Document Type: Conference Paper

References (9)

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