TCAD ready density gradient calculation of channel charge for strained Si/strained Si1-xGex dual channel pMOSFETs on (001) relaxed Si1-yGey

Journal of Computational Electronics

Volumn 3, Issue 3-4, 2004, Pages 193-197

  Nguyen, C D ^a   Pham, A T ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Band offsets; Heterostructures; Inversion layer; Quantization effects

Indexed keywords

EID: 24944546750     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7043-z     Document Type: Article

References (16)

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