High quality factor silicon cantilever driven by piezoelectric thin film actuator for resonant based mass detection

Microsystem Technologies

Volumn 15, Issue 8, 2009, Pages 1163-1169

  Lu, Jian ^a   Ikehara, Tsuyoshi ^a   Zhang, Yi ^a   Mihara, Takashi ^b   Itoh, Toshihiro ^a   Maeda, Ryutaro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OLYMPUS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODE STACKS; HIGH QUALITY FACTORS; MASS DETECTION; OPTIMIZED STRUCTURES; PIEZOELECTRIC LEAD ZIRCONATE TITANATES; PIEZOELECTRIC THIN FILMS; PZT; PZT ACTUATOR; Q-FACTOR; REDUCED PRESSURE; RESONANT STRUCTURES; SENSITIVE MASS; SILICON CANTILEVER; SINGLE CRYSTAL SILICON CANTILEVERS; SUPPORT LOSS; VIBRATION AMPLITUDE; VIBRATION MODES;

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ENERGY DISSIPATORS; NANOCANTILEVERS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS;

Q FACTOR MEASUREMENT;

EID: 67649207985     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-008-0720-2     Document Type: Conference Paper

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