Study on the noise of silicon capacitive resonant mass sensors in ambient atmosphere

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Kim, Sang Jin ^a,b,c   Ono, Takahito ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; OPTICAL SENSORS; PRESSURE EFFECTS; RESONANCE; SINGLE CRYSTALS; THERMAL EFFECTS;

MASS SENSORS; MICROCANTILEVERS; TEMPERATURE FLUCTUATION NOISE;

SILICON;

EID: 36649008548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2811911     Document Type: Article

References (26)

1. A. Gupta, D. Akin, and R. Bashir, Appl. Phys. Lett. 0003-6951 10.1063/1.1667011 84, 1976 (2004).
2. F. M. Battiston, J. P. Ramseyer, and H. P. Lang, Sens. Actuators B 0925-4005 10.1016/S0925-4005(01)00683-9 77, 122 (2001).
3. B. Ilic, D. Czaplewski, M. Zalalutdinov, and H. G. Craighead, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1421572 19, 2825 (2001).
4. H. Jensenius, J. Thaysen, A. A. Rasmussen, L. H. Veje, O. Hansen, and A. Boisen, Appl. Phys. Lett. 0003-6951 10.1063/1.126426 76, 2615 (2000).
5. N. V. Lavrik and P. G. Datskos, Appl. Phys. Lett. 0003-6951 10.1063/1.1569050 82, 2697 (2003).
6. T. Ono, X. Li, H. Miyashita, and M. Esashi, Rev. Sci. Instrum. 0034-6748 10.1063/1.1536262 74, 1240 (2003).
7. K. L. Ekinci, X. M. H. Huang, and M. L. Roukes, Appl. Phys. Lett. 0003-6951 10.1063/1.1755417 84, 4469 (2004).
8. E. Forsen, Appl. Phys. Lett. 0003-6951 10.1063/1.1999838 87, 043507 (2005).
9. Y. T. Yang, C. Callegari, X. L. Feng, K. L. Ekinci, and M. L. Roukes, Nano Lett. 1530-6984 10.1021/nl052134m 6, 583 (2006).
10. T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar, J. Appl. Phys. 0021-8979 10.1063/1.347347 69, 668 (1991).
11. H. Hosaka and K. Itao, Sens. Actuators, A 0924-4247 10.1016/0924-4247(95) 01003-J 49, 87 (1995).
12. K. Y. Yasumura, T. D. Stowe, E. M. Chow, T. Pfafman, T. W. Kenny, B. C. Stipe, and D. Rugar, J. Microelectromech. Syst. 1057-7157 10.1109/84.825786 9, 117 (2000).
13. A. N. Cleland and M. L. Roukes, J. Appl. Phys. 0021-8979 10.1063/1.1499745 92, 2758 (2002).
14. K. L. Ekinci, Y. T. Yang, and M. L. Roukes, J. Appl. Phys. 0021-8979 10.1063/1.1642738 95, 2682 (2004).
15. J. R. Vig and Y. Kim, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 46, 1558 (1999).
16. A. L. McWhorter, Semiconductor Surface Physics (Univ. of Pennsylvania, Philadelphia, 1957), pp. 207-228.
17. S. J. Kim, T. Ono, and M. Esashi, Appl. Phys. Lett. 0003-6951 10.1063/1.2171650 88, 053116 (2006).
18. W. P. Robins, Phase Noise in Signal Sources (Peregrinus, London, 1982).
19. R. F. Voss and J. Clarke, Phys. Rev. B 13, 556 (1976).
20. F. L. Walls and J. R. Vig, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/58.393101 42, 576 (1995).
21. T. Ono and M. Esashi, Meas. Sci. Technol. 0957-0233 10.1088/0957-0233/15/ 10/005 15, 1977 (2004).
22. Y. K. Yong and J. R. Vig, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/58.63111 37, 543 (1990).
23. T. Ono and M. Esashi, Rev. Sci. Instrum. 0034-6748 10.1063/1.1623627 74, 5141 (2003).
24. F. R. Blom, S. Bouwstra, M. Elwenspoek, and J. H. J. Fluitman, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.586300 10, 19 (1992).
25. L. D. Landau and E. M. Lifshitz, Fluid Mechanics, 2nd ed., Course of Theoretical Physics Vol. 6 (Pergamon, Oxford, 1963).
26. O. Sneh, M. A. Cameron, and S. M. George, Surf. Sci. 0039-6028 10.1016/0039-6028(96)00592-4 364, 61 (1996).