Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 753-759

  Hakim, M M A ^a   Tan, L ^b   Buiu, O ^b   Redman White, W ^a   Hall, S ^b   Ashburn, P ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

FILOX; Frame gate architecture; Short channel effect; Vertical MOSFETs

Indexed keywords

A-FRAMES; ALTERNATIVE METHODS; CHANNEL LENGTH; DRY ETCH DAMAGE; ETCH DAMAGE; FILLET LOCAL OXIDATIONS; FILOX; FRAME-GATE ARCHITECTURE; GATED DIODES; MOSFETS; POLYSILICON GATE ETCH; POLYSILICON GATES; PROTECTIVE OXIDES; SHORT CHANNEL EFFECT; SUBTHRESHOLD; SURROUND GATE; VERTICAL MOSFETS;

DEGRADATION; OXIDATION; PLASMA ETCHING; POLYSILICON; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 67349259701     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.02.016     Document Type: Article

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