Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1220-1227

  Alptekin, Emre ^a   Kirkpatrick, Casey Joe ^a   Misra, Veena ^a   Ozturk, Mehmet C ^a  

^a North Carolina State University   (United States)

Author keywords

Platinum germanide; Platinum germanosilicide; Platinum silicide; PtGe; PtSiGe; Schottky barrier height; SiGe

Indexed keywords

PLATINUM GERMANIDE; PLATINUM SILICIDE; PTGE; PTSIGE; SCHOTTKY BARRIER HEIGHT; SIGE;

ELECTRIC CONTACTS; EPITAXIAL LAYERS; FERMIONS; GERMANIUM; MOSFET DEVICES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67349226457     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2018159     Document Type: Article

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