Determination of germanium content and relaxation in Si1-xGex/Si layers by Raman spectroscopy and X-ray diffractometry

Physica Status Solidi (A) Applied Research

Volumn 172, Issue 2, 1999, Pages 425-432

  Bhagavannarayana, G ^a   Dietrich, B ^b   Zaumseil, P ^b   Dombrowski, K F ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LATTICE CONSTANTS; LATTICE VIBRATIONS; PHONONS; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; X RAY CRYSTALLOGRAPHY;

BRAGG GEOMETRY; DOUBLE-CRYSTAL X RAY DIFFRACTOMETRY; HETEROEPITAXY; RAMAN SHIFT;

HETEROJUNCTIONS;

EID: 0032672753     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199904)172:2<425::AID-PSSA425>3.0.CO;2-T     Document Type: Article

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