Nickel, platinum and zirconium germanosilicide contacts to ultra-shallow, P+N junctions formed by selective SiGe technology for CMOS technology nodes beyond 70nm

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 457-464

  Liu, Jing ^a   Mo, Hongxiang ^a   öztürk, Mehmet C ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ALLOYS; SURFACES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

SHEET RESISTANCE; SILICON GERMANIUM ALLOYS; ZIRCONIUM GERMANOSILICIDE;

CMOS INTEGRATED CIRCUITS;

EID: 0036950583     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-716-b10.7     Document Type: Article

References (6)

1. International Technology Roadmap for Semiconductors, 2001 Edition.
2. S. Gannavaram, N. Pesovic and M.C. Ozturk, IEDM Technical Digest, 437, (2000).
3. J. Liu, H. Mo and M.C. Ozturk, presented at the MRS 2001 spring meeting, San Francisco, CA, 2001.
4. J. S. Luo, W. T. Lin, C. Y. Chang and P. S. Shih, J. Vac. Sci. Technol. A18 (1), 143-148, 2000.
5. A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, D. J. Smith, and J.W. Mayer, Appl. Phys. Lett., 69 (1), 64-66, 1996.
6. V. Aubry-Fortuna, G. Tremblay, F. Meyer, Y. Miron, Y. Roichman, M. Eizenberg, F. Fortuna, U. Hormann and H. Strunk, J. Appl. Phys., 88 (3), 1418-1423, 2000.