Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGex Schottky contacts prepared by co-sputtering and thermal reaction

Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 255-259

  Ouacha, H ^a   Nur, O ^a   Fu, Y ^a   Willander, M ^a   Ouacha, A ^b   Turan, R ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); PLATINUM COMPOUNDS; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; SPUTTERING; THERMAL EFFECTS;

INTERFACE STATE DENSITY; NOISE PROPERTIES; PLATINUM SILICIDE; SCHOTTKY CONTACTS; SILICON GERMANIDE; THERMAL REACTION;

SCHOTTKY BARRIER DIODES;

EID: 0035307211     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/4/312     Document Type: Article

References (18)