Reduction of the barrier height of silicide/p-Si1-xGex contact for application in an infrared image sensor

Japanese Journal of Applied Physics

Volumn 28, Issue 4 A, 1989, Pages L544-L546

  Kanaya, Hiroyuki ^a   Hasegawa, Fumio ^a   Yamaka, Eiso ^b   Moriyama, Takashi ^c   Nakajima, Masakatsu ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TSUKUBA UNIVERSITY OF TECHNOLOGY   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Barrier; Height; Infrared CCD; Layer; P Si1 xGex; Relaxed; Silicide; Strained Layer

Indexed keywords

INFRARED DETECTORS; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER; SEMICONDUCTOR MATERIALS--CONTACTS; STRAIN;

BARRIER HEIGHT; RELAXED LAYERS; STRAINED LAYERS;

IMAGE SENSORS;

EID: 0024645549     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L544     Document Type: Article

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