Current crowding in high performance low-loss HFET RF switches

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 15-17

  Yang, Z ^a   Wang, J ^b   Hu, X ^c   Yang, J ^c   Simin, G ^b   Shur, M ^a   Gaska, R ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b The Department of Mechanical Engineering   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

AlGaN GaN heterostructure field effect transistor (HFET); Current crowding; Insertion loss; RF switch

Indexed keywords

HETEROJUNCTIONS; INSERTION LOSSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

CURRENT CROWDING; DIRECT CURRENT; METAL ELECTRODES; RF SWITCH;

FIELD EFFECT TRANSISTORS;

EID: 37549069676     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911621     Document Type: Article

References (5)

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