Laser singulation of thin wafer: Die strength and surface roughness analysis of 80 μm silicon dice

Optics and Lasers in Engineering

Volumn 47, Issue 7-8, 2009, Pages 850-854

  Sudani, Nitin ^a   Venkatakrishnan, Krishnan ^a   Tan, Bo ^a  

^a RYERSON UNIVERSITY   (Canada)

Author keywords

Dicing; Die strength; Femtosecond laser ablation; Surface roughness; Thin wafer

Indexed keywords

3-POINT BENDING; AVERAGE SURFACE ROUGHNESS; DICING; DIE FAILURES; DIE STRENGTH; EDGE ROUGHNESS; FEMTO-SECOND LASERS; FEMTOSECOND LASER ABLATION; HIGH REPETITION RATES; HIGH-POWER; LASER PARAMETERS; LASER POWER; NITROGEN GAS; PULSE WIDTHS; RELIABILITY TESTS; REPETITION RATES; ROUGHNESS ANALYSIS; SIDE WALLS; SINGULATION; STRENGTH REDUCTIONS; THIN WAFER; WAFER DICING; WAFER THICKNESS; WORKING LIVES;

BENDING STRENGTH; DIES; LASER ABLATION; LASERS; METAL ANALYSIS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE DEFECTS; SURFACE PROPERTIES; SURFACE ROUGHNESS; WALL FLOW;

SURFACE ANALYSIS;

EID: 67349083945     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlaseng.2009.01.009     Document Type: Article

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