Finite element analysis of die-strength testing configurations for thin wafers

Journal of Electronic Packaging

Volumn 127, Issue 2, 2005, Pages 189-192

  Sun, X K ^a   Xin, X J ^a   Pei, Z J ^a  

^a Kansas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; FRACTURE TESTING; MICROCRACKING; SENSITIVITY ANALYSIS; STRENGTH OF MATERIALS; TENSILE STRESS;

CIRCULAR CROSS SECTIONS; DIE-STRENGTH TESTING; INTEGRATED CIRCUIT PACKAGING; THIN WAFERS;

INTEGRATED CIRCUIT TESTING;

EID: 22944472688     PISSN: 10437398     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1869510     Document Type: Article

References (15)

1. McHatton, C., and Gumbert, C. M., 1998, "Eliminating Backgrind Defects with Wet Chemical Etching," Solid State Technol., 41(11), pp. 85-90.
2. Schraub, F. A. T., 2002, "Automated Handling of Ultra-Thin Silicon Wafers," Solid State Technol., 45(9), retrieved from http://sst.pennnet.com
3. Savastiouk, S., Siniaguine, O., and Hammond, M. L., 1998, "Atmospheric Downstream Plasma - a New Tool for Semiconductor Processing," Solid State Technol., 41(7), pp. 133-136.
4. Savastiouk, S., Siniaguine, O., and Hammond, M. L., 1998, "Atmospheric Downstream Plasma," European Semiconductor, 20(6), pp. 31-33.
5. McGuire, K., Danyluk, S., Baker, T. L., Rupnow, J. W., and McLaughlin, D., 1997, "The Influence of Backgrinding on the Fracture Strength of 100 mm Diameter (111) p-type Silicon Wafers," J. Mater. Sci., 32(4), pp. 1017-1024.
6. Jeong, S. M., Park, S. E., Oh, H. S., and Lee, H. L., 2000, "Fracture Strength Evaluation of Semiconductor Silicon Wafering Process Induced Damage," Proceedings of the 15th Annual Meeting of the American Society for Precision Engineering, Scottsdale, AZ, 22-27 October, pp. 119-123.
7. Hawkins, G., Berg, H., Lewis, G., and Lofgran, L., 1987, "Measurement of Silicon Strength as Affected by Wafer Back Processing," IEEE/International Reliability Physics Symposium, pp. 216-223.
8. Lee, S. M., Sim, S. M., Chung, Y. W., Jang Y. K., and Cho, H. K., 1997, "Fracture Strength Measurement of Silicon Chips," Jpn. J. Appl. Phys., Part 1, 36, pp. 3374-3380.
9. Lewis, S., 1992, "Backgrinding Wafers for Maximum Die Strength," Semiconductor International, July, pp. 86-89.
10. Lim, T. B., 1989, "The Impact of Wafer Back Surface Finish on Chip Strength," IEEE/International Reliability Physics Symposium, pp. 131-136.
11. Timoshenko, S. P., and Woinowsky-Krieger, S. 1989, Theory of Plates and Shells, McGraw-Hill, Singapore.
12. Young, W. C. 1975, Roark's Formulas for Stress and Strain, 6th ed., McGraw-Hill, Singapore.
13. Chen, C. P., and Leipold, M. H., 1980, "Fracture Toughness of Silicon," Ceram. Bull., 59, pp. 469-472.
14. Pei, Z. J., Billingsley, S. R., and Miura, S., 1999, "Grinding- Induced Subsurface Cracks in Silicon Wafers," Int. J. Mach. Tools Manuf., 39(7), pp. 1103-1116.
15. Kessel, C. G. M., Gee, S. A., and Murphy, J. J., 1983, "The Quality of Die-Attachment and Its Relationship to Stresses and Vertical Die-Cracking," Proc. 33rd ECC, CHMT, IEEE, New York, pp. 237-244.