Fast-forming boron-oxygen-related recombination center in crystalline silicon

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Bothe, Karsten ^a   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTALLINE MATERIALS; DEGRADATION; FERMI LEVEL; MATHEMATICAL MODELS; OXYGEN; THERMOANALYSIS;

BORON-DOPED CZOCHRALSKI SILICON; CAPTURE CROSS SECTION RATIO; DEGRADATION EFFECTS; ELECTRON QUASI-FERMI LEVEL;

SEMICONDUCTING SILICON;

EID: 29744434330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2147727     Document Type: Article

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