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Volumn 47, Issue 6 PART 2, 2008, Pages 4996-4999

Fabrication of nonvolatile nano floating gate memory with self-assembled metal-oxide nano particles embedded in polyimide

(7) Kim, Seon Pil a Lee, Tae Hee a Lee, Dong Uk a Kim, Eun Kyu a Koo, Hyun Mo b Cho, Won Ju b Kim, Young Ho a

a Hanyang University (South Korea)

b Kwangwoon University (South Korea)

Author keywords

In 2O3; Metal oxide; Nano floating gate memory; Nonvolatile memory

Indexed keywords

ACIDS; CHEMICAL REACTIONS; ELECTRIC PROPERTIES; FABRICATION; NANOPARTICLES; POLYIMIDES; POLYMERS; SILICON COMPOUNDS;

A DENSITIES; AVERAGE DIAMETERS; CONTROL LAYERS; CURING PROCESSES; ELECTRICAL PROPERTIES; IN 2O3; INSULATOR LAYERS; MEMORY WINDOWS; NANO FLOATING GATE MEMORIES; NANO FLOATING GATE MEMORY; NONVOLATILE; NONVOLATILE MEMORY; OXIDE NANO-PARTICLES; POLYAMIC ACIDS;

NANOSTRUCTURES;

EID: 55049131699 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.4996 Document Type: Article

Times cited : (8)

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