High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Cha, Daigil ^a   Shin, Jung H ^a   Park, Sangjin ^b   Lee, Eunha ^b   Park, Yoondong ^b   Park, Youngsoo ^b   Yoo, In Kyeong ^b   Seol, Kwang Soo ^b   Choi, Suk Ho ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); ION BEAM ASSISTED DEPOSITION; NANOSTRUCTURED MATERIALS; OXIDATION; SELF ASSEMBLY; SILICON; THERMAL EFFECTS; ULTRAHIGH VACUUM;

ATOMIC LAYER DEPOSITION; GATE NONVOLATILE MEMORY; THERMAL OXIDES; ULTRAHIGH VACUUM ION BEAM SPUTTER DEPOSITION;

AMORPHOUS MATERIALS;

EID: 33845741118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2404586     Document Type: Article

References (17)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, Wei Chan, and D. Buchanan, Tech. Dig. - Int. Electron Devices Meet. 1995, 521.
2. X. D. Pi, O. H. Y. Zalloum, T. Roschuk, J. Wojcik, A. P. Knights, P. Mascher, and P. J. Simpson, Appl. Phys. Lett. 88, 103111 (2006).
3. M. She and T. J. King, IEEE Trans. Electron Devices 50, 1934 (2003).
4. B. De Salvo, C. Gerardi, S. Lombardo, T. Barno, L. Perniola, D. Mariolle, P. Mur, A. Toffoli, M. Gely, M. N. Semeria, S. Deleonibus, G. Ammendola, V. Ancarani, M. Melanotte, R. Bez, L. Baldi, D. Corso, I. Crupi, R. A. Puglisi, G. Nicotra, E. Rimini, F. Mazen, G. Ghibaudo, G. Pananakakis, C. Monzio Compagnoni, D. Ielmini, A. Lacaita, A. Spinelli, Y. M. Wan, and K. van der Jeugd, Tech. Dig. - Int. Electron Devices Meet. 2003, 597.
5. R. Muralidhar, R. F. Steimle, M. Sadd, R. Rao, C. T. Swift, E. J. Prinz, J. Yater, L. Grieve, K. Harber, B. Hradsky, S. Straub, B. Acred, W. Paulson, W. Chen, L. Parker, S. G. H. Anderson, M. Rossow, T. Merchant, M. Paransky, T. Huynh, D. Hadad, K.-M. Chang, and B. E. White, Tech. Dig. - Int. Electron Devices Meet. 2003, 601.
6. J. De Blauwe, M. Ostraat, M. L. Green, G. Weber, T. Sorsch, A. Kerber, F. Klemens, R. Cirelli, E. Ferry, J. L. Grazul, F. Baumann, Y. Kim, W. Mansfield, J. Bude, J. T. C. Lee, S. J. Hillenius, R. C. Flagan, and H. A. Atwater, Tech. Dig. - Int. Electron Devices Meet. 2000, 683.
7. O. González-Varona, B. Garrido, S. Cheylan, A. Ṕrez-Rodríguez, A. Cuadras, and J. R. Morante, Appl. Phys. Lett. 82, 2151 (2003).
8. E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, and J. van den Berg, Appl. Phys. Lett. 77, 3450 (2000).
9. T. Z. Lu, M. Alexe, R. Scholz, V. Talelaev, and M. Zacharias, Appl. Phys. Lett. 87, 202110 (2005).
10. Y. Yang, A. Purwarb, and M. H. White, Solid-State Electron. 43, 202 (1999).
11. H. Silva, M. K. Kim, U. Avci, A. Kumar, and S. Tiwary, MRS Bull. 29, 845 (2004).
12. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, J. Appl. Phys. 95, 3723 (2004).
13. K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996).
14. H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, A. Claverie, M. Respaud, P. Dimitrakis, and P. Normand, J. Appl. Phys. 99, 044302 (2006).
15. C. Spinella, S. Lombardo, and F. Priolo, J. Appl. Phys. 84, 5383 (1998).
16. F. Iacona, G. Franzo, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).
17. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, Appl. Phys. Lett. 80, 661 (2002).