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Applied Physics A: Materials Science and Processing

Volumn 95, Issue 4, 2009, Pages 1045-1057

Hybrid silicon evanescent approach to optical interconnects

(10) Liang, Di a Fang, Alexander W a Chen, Hui Wen a Sysak, Matthew N b Koch, Brian R a Lively, Erica a Raday, Omri c Kuo, Ying Hao a Jones, Richard b Bowers, John E a

a University of California (United States)

b INTEL CORPORATION (United States)

c INTEL CORPORATION (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; BAND GAPS; CHANNEL DESIGN; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DBR; DISCRETE COMPONENTS; DISTRIBUTED BRAGG REFLECTOR LASERS; DISTRIBUTED FEEDBACK; ELECTRICAL BANDWIDTH; ELECTRICALLY PUMPED; EPITAXIAL TRANSFER; FABRY-PEROT DEVICES; HIGH QUALITY; HYBRID SILICON; MODULATION EFFICIENCY; ON CHIPS; OVERALL CHARACTERISTICS; QUANTUM WELL INTERMIXING; RESISTANCE CAPACITANCE; SAMPLED GRATINGS; SILICON BASED PHOTONICS; SILICON ON INSULATOR WAVEGUIDE; SINGLE-FREQUENCY; SOI WAVEGUIDES; THEORETICAL PREDICTION; THRESHOLD CHARACTERISTICS; WAFER DIAMETER; WAFER-SCALE INTEGRATION;

BRAGG CELLS; DISTRIBUTED BRAGG REFLECTORS; DISTRIBUTED FEEDBACK LASERS; ELECTROABSORPTION MODULATORS; ENERGY GAP; INTEGRATED CIRCUITS; INTEGRATED OPTICS; INTEGRATED OPTOELECTRONICS; LASER OPTICS; LIGHT; LIGHT ABSORPTION; LIGHT SOURCES; MODULATORS; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SIGNAL PROCESSING; SMELTING; WAVEGUIDES;

SILICON WAFERS;

EID: 67149135344 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5118-1 Document Type: Article

Times cited : (34)

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