Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1050-1053

  Nie, D ^a   Mei, T ^a   Djie, H S ^a   Chin, M K ^a   Tang, X H ^a   Wang, Y X ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE FOR INFOCOMM RESEARCH   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; BAND STRUCTURE; CRYSTAL DEFECTS; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ARGON PLASMA; LINEWIDTH; MULTIPLE BAND GAPS; QUANTUM WELL INTERMIXING;

QUANTUM WELL LASERS;

EID: 31144444628     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924414     Document Type: Article

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