Dynamic loadline analysis of AlGaN/GaN HEMTS

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 443-452

  Green, Bruce M ^a,b   Kaper, Valery S ^a   Tilak, Vinayak ^a   Shealy, James R ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DYNAMIC LOADS; ELECTRIC SPACE CHARGE; GALLIUM NITRIDE; MATHEMATICAL MODELS;

SURFACE TRAPPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242270717     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)

1. V. Tilak, B. Green, H. Kim, J. Smart, V. Kaper, T. Prunty, J.R. Shealy, and L.F. Eastman. High power AlGaN/GaN HEMT's with AlN sub-buffer on SiC substrates. IEEE Electron Dev. Lett., 2001. Accepted for publication.
2. Y.-F. Wu et al. Very-High Power Density AlGaN/GaN HEMT's. IEEE Trans. Elect. Dev., 48:586-590, Mar. 2001.
3. B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman. The role of surface passivation on the microwave characteristics of AlGaN/GaN HEMTs. IEEE Electron Device Lett., 21 (6):268-270, June 2000.
4. R. Vetury, NQ. Zhang, and U.K. Mishra. The impact of surface states on the dc and rf characteristics of AlGaN/GaN HFET's. IEEE Trans. Elect. Dev., 48:560-566, Mar. 2001.
5. B.M. Green, S. Lee, V. Tilak, H. Kim, J.A. Smart, K.J. Webb, J.R. Shealy, and L.F. Eastman. High Power Broadband MMIC's on SiC Substrates. IEEE Trans. Microwave Theory Tech., 21(12), Dec. 2001.
6. B.M. Green. Characteristics, Optimization, and Integrated Circuit Applications of AlGaN/GaN HEMT's. PhD thesis, Cornell University, 2001.
7. B.M. Green, K.K. Chu, H. Kim, V. Tilak, J.A. Smart, J.R. Shealy, and L.F. Eastman. Validation of a large signal model for AlGaN/GaN HEMT's. In 2000 MTT-S Symposium Digest, pages 761-764, Boston, Mass., 2000.
8. S. Sriram, R.C. Clarke, R.L. Messham, T.J. Smith, and M.C. Driver. High voltage operation in class B GaAs X-band power MESFETs. In Proceedings, 1989 IEEE/Cornell Conference on High Speed Semiconductor Devices and Circuits, pages 218-227, Ithaca, NY, 1989.
9. A.V. Vertiatchikh, L.F. Eastman, W. J. Schaff, and T. Prunty. Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor. Elect. Lett., 38(8):388-389, 11 Apr. 2002.
10. S.R. Blight, R.H. Wallis, and H. Thomas. Surface influence on the conductance DLTS spectra of GaAs MESFET's. IEEE Trans. Elect. Dev., 33:1447-1453, Oct. 1986.
11. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.B. Wickenden, and R.L. Henry. Trapping effects and microwave power performance in AlGaN/GaN HEMT's. IEEE Trans. Elect. Dev., 48:465-471, Mar. 2001.
12. I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. Mishra, I.P. Smorchkova, S. Keller, C. Nguyen, and E. Kohn. Current instabilities in GaN-based devices. IEEE Electron Dev. Lett., 19(2):62-64, Feb. 2001.
13. P. Blood and J.W. Orton. The Electrical Characterization of Semiconductors, volume 14 of Techniques of Physics. Academic Press, London, 1992.
14. S. Sze. High-Speed Semiconductor Devices. Wiley, New York, 1990.
15. S. Sze. Physics of Semiconductor Devices. Wiley, New York, 1981.
16. A.A. Grinberg, S. Luryi, M.R. Pinto, and N.L. Schryer. Space-charge-limited current in a film. IEEE Trans. Elect. Dev., 36(6):1162-1170, June 1989.
17. J.A. Geurst. Theory of space charge limited currents in thin semiconductors. Phys. Stat. Sol., 15(6):107, 1966.
18. R.S. Muller and Kamins. Device Electronics for Integrated Circuits. Wiley, New York, 1986.
19. W.R. Curtice. A MESFET Model for Use in the Design of GaAs Integrated Circuits. IEEE Trans. Microwave Theory Tech., MTT-28(5):448-455, May 1980.
20. R. Vetury, Y.-F. Wu, P.T. Fini, G. Parish, s. Keller, S. DenBaars, and U.K. Mishra. Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors. In IEDM Digest, pages 55-58, 1998.
21. G. Koley and M. Spencer. In Proceedings, 2002 IEEE/Lester F. Eastman Conference on High Performance Devices, Newark, DE, 6-8 Aug. 2002.
22. W.R. Curtice and M. Ettenberg. A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers. IEEE Trans. Microwave Theory Tech., MTT-33(12):1383-1394, Dec. 1985.
23. W.R. Curtice. CFET User's Manual. W.R. Curtice Consulting, 1998.