Interlayer methods for reducing the dislocation density in gallium nitride

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 296-301

  Kappers, M J ^a   Moram, M A ^a   Zhang, Y ^a   Vickers, M E ^a   Barber, Z H ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Dislocation density; Dislocation reduction; Gallium nitride; Interlayers; Scandium nitride

Indexed keywords

ANNEALING; COALESCENCE; DISLOCATIONS (CRYSTALS); EPILAYERS; FILM THICKNESS; METALLORGANIC VAPOR PHASE EPITAXY; REDUCTION; SAPPHIRE; SILANES; THIN FILMS;

DISLOCATION REDUCTION; INTERLAYER METHODS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 36048954189     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.170     Document Type: Article

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