Characteristics of Si Ox thin film deposited by atmospheric pressure plasma-enhanced chemical vapor deposition using PDMS O2 He

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Lee, J H ^a   Kim, Y S ^a   Oh, J S ^a   Kyung, S J ^a   Lim, J T ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE PLASMAS; DIELECTRIC BARRIER DISCHARGES; GASPHASE; OXYGEN FLOW RATES; POLYDIMETHYLSILOXANE PDMS; SILANOL GROUPS; SILICON OXIDE THIN FILMS;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; DEPOSITION RATES; ELECTRIC DISCHARGES; FLOW RATE; GAS DYNAMICS; GAS MIXTURES; HELIUM; METAL ANALYSIS; MICROCHANNELS; OXIDATION; OXIDE FILMS; OXYGEN; PLASMA DENSITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICONES; SURFACE PROPERTIES; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILMS;

GAS PERMEABLE MEMBRANES;

EID: 65949123146     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3129464     Document Type: Article

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