Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

Thin Solid Films

Volumn 515, Issue 3, 2006, Pages 917-921

  Lee, J H ^a   Jeong, C H ^a   Kim, H B ^a   Lim, J T ^a   Kyung, S J ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Diffusion barrier; HMDS; Passivation; PECVD; Siliconoxynitride; WVTR

Indexed keywords

DIFFUSION; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; MULTILAYERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

DIFFUSION BARRIERS; HEXAMETHYLDISILAZANE (HMDS); SILICONOXYNITRIDE; WATER VAPOR TRANSMITTANCE RATE (WVTR);

THIN FILMS;

EID: 33750483628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.056     Document Type: Article

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