SiO 2 film formed by inductivity coupled plasma chemical vapor deposition at low temperature for poly-Si TFT

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Jung, Ji Sim ^a   Kwon, Jang Yeon ^a   Park, Youngsoo ^a   Kim, Do Young ^a   Cho, Hans S ^a   Park, Kyung Bae ^a   Xianyu, Wenxu ^a   Yin, Huaxiang ^a   Noguchi, Takashi ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Gate insulator; High density plasma; ICP CVD; SiO 2

Indexed keywords

EID: 12744276028     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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