Characteristics of SiO2-like thin film deposited by atmospheric-pressure PECVD using HMDS O2 Ar

Journal of the Electrochemical Society

Volumn 155, Issue 3, 2008, Pages

  Lee, J H ^a   Pham, Thuy T T ^a   Kim, Y S ^a   Lim, J T ^a   Kyung, S J ^a   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; GAS MIXTURES; SILICA;

DIELECTRIC BARRIER DISCHARGE; HIGH-OXYGEN-PERCENTAGE;

THIN FILM DEVICES;

EID: 38349094859     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2822963     Document Type: Article

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