SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5044-5049

Deposition and characterization of TiBCN films by cathodic arc plasma evaporation

(4) Tsai, Pi Chuen a Chen, Wen Jauh b Chen, Jun Hao a Chang, Chi Lung c

a NATIONAL FORMOSA UNIVERSITY (Taiwan)

b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c MINGDAO UNIVERSITY (Taiwan)

Author keywords

Cathodic arc plasma; Microstructure; Nanocomposite; TEM; TiBCN film; XPS

Indexed keywords

AMORPHOUS MATRICES; AMORPHOUS STRUCTURES; ATOMIC FORCE MICROSCOPES; BONDING STATE; CATHODIC ARC EVAPORATION; CATHODIC ARC PLASMA; CATHODIC ARC PLASMA EVAPORATION; COMPOSITE TARGET; DEPOSITION PARAMETERS; FEG-SEM; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FILM CONCENTRATION; FILM MICROSTRUCTURES; GLANCING ANGLE; HIGH RESOLUTION; NANO SCALE; NANO-COMPOSITE STRUCTURE; RAMAN SPECTRA; SI (100) SUBSTRATE; SILICON SUBSTRATES; TEM; TI (C ,N); TIBCN FILM; WAVE NUMBERS; X RAY DIFFRACTOMETRY; XPS;

ATOMIC SPECTROSCOPY; ATOMS; CAVITY RESONATORS; COMPOSITE FILMS; ELECTRIC ARCS; EMISSION SPECTROSCOPY; EVAPORATION; FIELD EMISSION; FIELD EMISSION MICROSCOPES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; NANOCOMPOSITES; PLASMA DEPOSITION; PLASMAS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SPECTRUM ANALYSIS; SUBSTRATES; TARGETS; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 65649147900 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.03.029 Document Type: Article

Times cited : (24)

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