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Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

(6) Peralvarez M a Carreras, Josep a Barreto, J b Morales, A b Dominguez C b Garrido, B a

a UNIVERSITY OF BARCELONA (Spain)

b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; DESCALING; LEAKAGE CURRENTS; LIGHT; LIGHT EMISSION; METALLIZING; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; NITRIDES; NONMETALS; OPTICAL WAVEGUIDES; PHOTOACOUSTIC EFFECT; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; POLYSILICON; SILICON; SILICON COMPOUNDS; SILICON NITRIDE; SULFATE MINERALS; VAPOR DEPOSITION;

(100) SILICON; AMERICAN INSTITUTE OF PHYSICS (AIP); CONTROL LAYERS; DEVICE DEGRADATION; GATE STACKS; HIGH POWER EFFICIENCY; LEAKAGE CURRENT REDUCTION; LIGHT EMITTING DEVICES; LONG LIFETIME; ORDERS-OF-MAGNITUDE; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); POLYCRYSTALLINE SILICON (P-SI); POWER EFFICIENCIES; RELIABILITY ENHANCEMENT; SILICON NANOCRYSTAL; SILICON NANOCRYSTALS (SI-NC); SILICON OXIDES;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 45749107503 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2939562 Document Type: Article

Times cited : (33)

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