Effect of Al/N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Zhou, Lin ^a   Smith, David J ^a   Storm, D F ^b   Katzer, D S ^b   Binari, S C ^b   Shanabrook, B V ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL/N FLUX RATIOS; BUFFER LEAKAGE; ELECTRON HALL MOBILITY; FILM QUALITY; FLUX RATIO; NUCLEATION LAYERS;

ELECTRONIC PROPERTIES; FILM GROWTH; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SILICON CARBIDE; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 33645498521     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162670     Document Type: Article

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