Microstructures of cubic and hexagonal GaN grown on (0001) sapphire by ECR-MBE with various electric biases

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 487-491

  Araki, T ^a   Minami, T ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

ELECTRIC BIASES; GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221736     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<487::AID-PSSA487>3.0.CO;2-V     Document Type: Article

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