Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Krier, A ^a   Huang, X L ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; LIQUID PHASE EPITAXY; SPECTROSCOPIC ANALYSIS;

DIFFERENTIAL RESISTANCE; NATIVE LATTICE COMPLEX DEFECTS; STRUCTURE DEFECTS;

LIGHT EMITTING DIODES;

EID: 18644380581     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1863446     Document Type: Article

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