The birth of a quasiparticle in silicon observed in time-frequency space

Nature

Volumn 426, Issue 6962, 2003, Pages 51-54

  Hase, Muneaki ^a   Kitajima, Masahiro ^a   Constantinescu, Anca Monia ^b   Petek, Hrvoje ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; FREQUENCY DOMAIN ANALYSIS; HIGH ENERGY PHYSICS; LASER PULSES; PHONONS; SILICON; TIME DOMAIN ANALYSIS; TRANSIENTS; ULTRAFAST PHENOMENA;

QUASIPARTICLES;

SOLID STATE PHYSICS;

SILICON;

NANOTECHNOLOGY;

ARTICLE; ELECTRON; ELEMENTARY PARTICLE; ENERGY; LASER; MATHEMATICAL ANALYSIS; PARTICULATE MATTER; PHYSICS; PRIORITY JOURNAL; QUANTUM MECHANICS; SOLID STATE;

EID: 0242460524     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02044     Document Type: Article

References (29)

1. Pines, D. & Nozieres, P. Theory of Quantum Liquids (Benjamin, New York, 1966).
2. Huber, R. et al. How many-particle interactions develop after ultrafast excitation of an electron-hole plasma. Nature 414, 286-289 (2001).
3. Fischer, B. & Hofmann, K. R. A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon. Appl. Phys. Lett. 76, 583-585 (2000).
4. Downer, M. C. & Shank, C. V. Ultrafast heating of silicon on sapphire by femtosecond optical pulses. Phys. Rev. Lett. 56, 761-764 (1986).
5. Sjodin, T., Petek, H. & Dai, H.-L. Ultrafast carrier dynamics in silicon: A two-color transient reflection grating study on a (111) surface. Phys. Rev. Lett. 81, 5664-5667 (1998).
6. Sabbah, A. J. & Riffe, D. M. Femtosecond pump-probe reflectivity study of silicon carrier dynamics. Phys. Rev. B66, 165217 (2002).
7. Buhleier, R., Lüpke, G., Marowsky, G., Gogolak, Z. & Kuhl, J. Anisotropic interference of degenerate four-wave mixing in crystalline silicon. Phys. Rev. B 50, 2425-2431 (1994).
8. Bigot, I. Y., Portella, M. T., Schoenlein, R. W., Cunningham, J. E. & Shank, C. V. Two-dimensional carrier-carrier screening in a quantum well. Phys. Rev. Lett. 67, 636-639 (1991).
9. Goldman, J. R. & Prybyla, J. A. Ultrafast dynamics of laser-excited electron distribution in silicon. Phys. Rev. Lett. 72, 1364-1367 (1994).
10. Pfeifer, T., Dekorsky, T., Kütt, W. & Kurz, H. Generation mechanism for coherent LO phonons in surface-space-charge fields of III-V-compounds. Appl. Phys. A 55, 482-488 (1992).
11. Saeta, P. N., Greene, B. I. & Chuang, S. L. Short terahertz pulses from semiconductor surfaces: The importance of bulk difference-frequency mixing. Appl. Phys. Lett. 63, 3482-3484 (1993).
12. Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G. & Linfield, E. H. Simulation of terahertz generation at semiconductor surfaces. Phys. Rev. B 65, 165301 (2002).
13. Khurgin, J. B. Optical rectification and teraherz emission in semiconductors excited above the band gap. 1. Opt. Soc. Am. B 11, 2492-2501 (1994).
14. Sipe, J. E., Mizrahi, V. & Stegeman, G. I. Fundamental difficulty in the use of second-harmonic generation as a strictly surface probe. Phys. Rev. B 35, 9091-9094 (1987).
15. Caumes, J.-P., Videau, L., Rouyer, C. & Freysz, E. Kerr-like nonlinearity induced via terahertz generation and the electro-optical effect in zinc blende crystals. Phys. Rev. Lett. 89, 047401 (2002).
16. Cerdeira, F., Fjeldlyl T. A. & Cardona, M. Effect of free carriers on zone-center vibrational modes in heavily doped p-type Si 11. Optical modes. Phys. Rev. B 8, 4734-4745 (1973).
17. Scholz, R., Pfeifer, T. & Kurz, H. Density-matrix theory of coherent phonon oscillations in germanium. Phys. Rev. B 47, 16229-16236 (1993).
18. Stevens, T. E., Kuhl, J. & Merlin, R. Coherent phonon generation and the two stimulated Raman tensors. Phys. Rev. B 65, 144304 (2002).
19. Lautenschlager, P., Garriga, M., Viña, L. & Cardona, M. Temperature dependence of the dielectric function and interband critical points in silicon. Phys. Rev. B 36, 4821-4830 (1987).
20. Cerdeira, F. & Cardona, M. Effect of carrier concentration on the Raman frequencies of Si and Ge. Phys. Rev. B 5, 1440-1454 (1972).
21. Contreras, G., Sood, A. K. & Cardona, M. Raman scattering by intervalley carrier-density fluctuations in n-type Si: Intervalley and intravalley mechanisms. Phys. Rev. B 32, 924-929 (1985).
22. Chandrasekhar, M., Rössler, U. & Cardona, M. Intra- and interband Raman scattering by free carriers in heavily doped p-Si Phys. Rev. B 22, 761-770 (1980).
23. Wolff, P. A. Effect of nonparabolicity on light scattering from plasmas in solids. Phys. Rev. 171, 436-444 (1968).
24. Bajramov, B. H., Ipatova, I. P. & Voitenko, V. A. Raman scattering from current carriers in solids. Phys. Rep. 229, 221-290 (1993).
25. Kanehisa, M. A., Wallis, R. F. & Balkanski, M. Interband electronic Raman scattering in p-silicon. Phys. Rev. B 25, 7619-7625 (1982).
26. Belitsky, V. I., Cantarero, A., Cardona, M., Trallero-Giner, C. & Pavlov, S. T. Feynman diagrams and Fano interference in light scattering from doped semiconductors. J. Phys. Condens. Matter 9, 5965-5976 (1997).
27. Lautenschlager, P., Allen, P. B. & Cardona, M. Phonon-induced lifetime broadenings of electronic states and critical points in Si and Ge. Phys. Rev. B 33, 5501-5511 (1986).
28. Fano, U. Effects of configuration interaction on intensities and phase shifts. Phys. Rev. 124, 1866-1878 (1961).
29. Balkanski, M., Jain, K. P., Beserman, R. & Jouanne, M. Theory of interference distortion of Raman scattering line shapes in semiconductors. Phys. Rev. B 12, 4328-4337 (1975).