Hot-phonon temperature and lifetime in biased boron-implanted SiO 2/Si/SiO2 channels

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 803-807

  Liberis, J ^a   Matulioniene, I ^a   Matulionis, A ^a   Lemme, M C ^b   Kurz, H ^b   Forst M ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b AMO GMBH   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SYSTEMS; HOLE MOBILITY; MICROWAVES; PHONONS; SEMICONDUCTING BORON; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

HOT-HOLE ENERGY-RELAXATION; HOT-PHONON LIFETIME; HOT-PHONON TEMPERATURE; OPTICAL PHONONS;

SILICON COMPOUNDS;

EID: 33646725118     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/017     Document Type: Article

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