Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma

Plasma Processes and Polymers

Volumn 2, Issue 5, 2005, Pages 407-413

  Zhu, Xiaodong ^a,b   Arefi Khonsari, Farzaneh ^a   Petit Etienne, Camille ^a   Tatoulian, Michael ^a  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Atmospheric pressure; Filamentary discharges; Hexamethyldisiloxane (HMDSO); Plasma assisted chemical vapor deposition (PACVD); Silicon oxide

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTRIC DISCHARGES; ELLIPSOMETRY; FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; OXYGEN; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

FILAMENTARY DISCHARGES; HEXAMETHYLDISILOXANE (HMDSO); PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION (PACVD); SILICON OXIDE FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 23044487679     PISSN: 16128850     EISSN: None     Source Type: Journal    
DOI: 10.1002/ppap.200400049     Document Type: Article

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