Time dependent trapping and generation-recombination of interface charges: Modeling and characterization for 4H-SiC MOSFETs

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 847-850

  Potbhare, S ^a   Goldsman, N ^a   Pennington, G ^a   Lelis, A ^b   McGarrity, J M ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Berkeley Research Association   (United States)

Author keywords

Capture emission time constants; Generation recombination; Interface traps

Indexed keywords

ELECTRIC CHARGE; INTERFACE STATES; INVERSION LAYERS; SILICA; SILICON CARBIDE; SILICON OXIDES;

ELECTRONS AND HOLES; GENERATION RECOMBINATION; INTERFACE TRAP DENSITY; INTERFACE TRAPS; SHOCKLEY-READ-HALL RECOMBINATION MODELS; STEADY-STATE OPERATION; STEADY-STATE VALUES; TIME CONSTANTS;

MOSFET DEVICES;

EID: 38449085109     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.847     Document Type: Conference Paper

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