222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Hirayama, Hideki ^a,b,d   Noguchi, Norimichi ^a,b,d   Fujikawa, Sachie ^a,b,d   Norimatsu, Jun ^a,b,d   Kamata, Norihiko ^b,d   Takano, Takayoshi ^a,c   Tsubaki, Kenji ^a,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

AlGaN; AlN; Deep UV LED; MOCVD; Quaternary InAlGaN; Threading dislocation density

Indexed keywords

ALGAN; ALN; DEEP-UV LED; MOCVD; QUATERNARY INALGAN; THREADING DISLOCATION DENSITY;

CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; TIME DIVISION MULTIPLEXING; ULTRAVIOLET INSTRUMENTS;

LIGHT EMITTING DIODES;

EID: 65349168354     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809729     Document Type: Conference Paper

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