Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2283-2285

  Hirayama, Hideki ^a,c   Yatabe, Tohru ^a,b   Ohashi, Tomoaki ^a,b   Kamata, Norihiko ^b,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN QUANTUM WELLS; ALN; ALN BUFFER; DEEP ULTRAVIOLET; EMISSION ENHANCEMENT; EMISSION WAVELENGTH; FWHM OF XRC; GROWTH TECHNIQUES; HIGH QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTI QUANTUM WELLS; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; ROCKING CURVES; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITIES;

COMMUNICATION CHANNELS (INFORMATION THEORY); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; SAPPHIRE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 65349088751     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778697     Document Type: Conference Paper

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