Realization of 340-nm-band high-output-power (>7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2941-2944

  Fujikawa, Sachie ^a   Takano, Takayoshi ^b   Kondo, Yukihiro ^b   Hirayama, Hideki ^a,c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

AIN; AlGaN; InAlGaN; MOCVD; UV LED

Indexed keywords

CONCENTRATION (PROCESS); CORUNDUM; ELECTROMAGNETIC WAVES; FIBER LASERS; HOLE CONCENTRATION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; ULTRAVIOLET INSTRUMENTS; ULTRAVIOLET RADIATION;

AIN; ALGAN; INALGAN; MOCVD; UV-LED;

LIGHT EMITTING DIODES;

EID: 54249154686     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2941     Document Type: Article

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